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M27C64A
64K (8K x 8) UV EPROM and OTP ROM
VERY FAST ACCESS TIME: 150ns COMPATIBLE with HIGH SPEED MICROPROCESSORS, ZERO WAIT STATE LOW POWER "CMOS" CONSUMPTION: - Active Current 30mA - Standby Current 100A PROGRAMMING VOLTAGE: 12.5V ELECTRONIC SIGNATURE for AUTOMATED PROGRAMMING HIGH SPEED PROGRAMMING (less than 1 minute)
28
1
FDIP28W (F)
PLCC32 (C)
DESCRIPTION The M27C64A is a high speed 65,536 bit UV erasable and electrically programmable memory EPROM ideally suited for microprocessor systems requiring large programs. It is organized as 8,192 by 8 bits. The 28 pin Window Ceramic Frit-Seal Dual-in-Line package has transparent lid which allows the user to expose the chip to ultraviolet light to erase the bit pattern. Anew pattern can then be written to the device by following the programming procedure. For applications where the content is programmed only on time and erasure is not required, the M27C64A is offered in Plastic Leaded Chip Carrier package.
Figure 1. Logic Diagram
VCC
VPP
13 A0-A12
8 Q0-Q7
P
M27C64A
Table 1. Signal Names
A0 - A12 Q0 - Q7 E G P VPP VCC VSS Address Inputs Data Outputs Chip Enable Output Enable Program Program Supply Supply Voltage Ground
E G
VSS
AI00834B
March 1995
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M27C64A
Figure 2A. DIP Pin Connections
Figure 2B. LCC Pin Connections
AI00835
VSS DU Q3 Q4 Q5
AI00836
VPP A12 A7 A6 A5 A4 A3 A2 A1 A0 Q0 Q1 Q2 VSS
1 28 2 27 3 26 4 25 5 24 6 23 7 22 M27C64A 8 21 9 20 10 19 11 18 12 17 13 16 14 15
VCC P NC A8 A9 A11 G A10 E Q7 Q6 Q5 Q4 Q3
A6 A5 A4 A3 A2 A1 A0 NC Q0
A7 A12 VPP DU VCC P NC 1 32 A8 A9 A11 NC G A10 E Q7 Q6 9 M27C64A 25 17 Q1 Q2
Warning: NC = Not Connected, DU = Don't Use Value -40 to 125 -50 to 125 -65 to 150 -2 to 7 -2 to 7 -2 to 13.5 -2 to 14
Warning: NC = Not Connected
Table 2. Absolute Maximum Ratings (1)
Symbol TA TBIAS TSTG VIO (2) VCC VA9 (2) VPP Parameter Ambient Operating Temperature Temperature Under Bias Storage Temperature Input or Output Voltages (except A9) Supply Voltage A9 Voltage Program Supply Voltage Unit C C C V V V V
Notes: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the SGS-THOMSON SURE Program and other relevant quality documents. 2. Minimum DC voltage on Input or Output is -0.5V with possible undershoot to -2.0V for a period less than 20ns. Maximum DC voltage on Output is VCC +0.5V with possible overshoot to VCC +2V for a period less than 20ns.
DEVICE OPERATION The modes of operation of the M27C64A are listed in the Operating Modes table. A single 5V power supply is required in the read mode. All inputs are TTL levels except for VPP and 12V on A9 for Electronic Signature.
Read Mode The M27C64A has two control functions, both of which must be logically active in order to obtain data at the outputs. Chip Enable (E) is the power control and should be used for device selection. Output Enable (G) is the output control and should
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M27C64A
be used to gate data to the output pins, independent of device selection. Assuming that the addresses are stable, the address access time (tAVQV) isequal to the delay from E to output (tELQV). Data is available at the output after a delay of tGLQV from the falling edge of G, assuming that E has been low and the addresses have been stable for at least tAVQV-tGLQV. Standby Mode The M27C64A has a standby mode which reduces the active current from 30mA to 100A. The M27C64A is placed in the standby mode by applying a CMOS high signal to the E input. When in the standby mode, the outputs are in a high impedance state, independent of the G input. Two Line Output Control Because EPROMs are usually used in larger memory arrays, this product features a 2 line control function which accommodates the use of multiple memory connection. The two line control function allows: a. the lowest possible memory power dissipation, b. complete assurance that output bus contention will not occur. For the most efficient use of these two control lines, E should be decoded and used as the primary device selecting function, while G should be made a common connection to all devices in the array and connected to the READ line from the system control bus. This ensures that all deselected memory devices are in their low power standby mode and that the output pins are only active when data is required from a particular memory device. System Considerations The power switching characteristics of Advanced CMOS EPROMs require careful decoupling of the devices. The supply current, ICC, has three segments that are of interest to the system designer: the standby current level, the active current level, and transient current peaks that are produced by the falling and rising edges of E. The magnitude of the transient current peaks is dependent on the capacitive and inductive loadingof the device at the output. The associated transient voltage peaks can be suppressed by complying with the two line output control and by properly selected decoupling capacitors. It is recommended that a 0.1F ceramic capacitor be used on every device between VCC and VSS. This should be a high frequency capacitor of low inherent inductance and should be placed as close to the device as possible. In addition, a 4.7F bulk electrolytic capacitor should be used between VCC and VSS for every eight devices. The bulk capacitor should be located near the power supply connection point. The purpose of the bulk capacitor is to overcome the voltage drop caused by the inductive effects of PCB traces.
Table 3. Operating Modes
Mode Read Output Disable Program Verify Program Inhibit Standby Electronic Signature
Note: X = VIH or VIL, VID = 12V 0.5V
E VIL VIL VIL VIL VIH VIH VIL
G VIL VIH VIH VIL X X VIL
P VIH VIH VIL Pulse VIH X X VIH
A9 X X X X X X VID
VPP VCC VCC VPP VPP VPP VCC VCC
Q0 - Q7 Data Out Hi-Z Data In Data Out Hi-Z Hi-Z Codes
Table 4. Electronic Signature
Identifier Manufacturer's Code Device Code A0 VIL VIH Q7 1 0 Q6 0 0 Q5 0 0 Q4 1 0 Q3 1 1 Q2 0 0 Q1 1 0 Q0 1 0 Hex Data 9Bh 08h
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M27C64A
AC MEASUREMENT CONDITIONS
Input Rise and Fall Times Input Pulse Voltages Input and Output Timing Ref. Voltages 20ns 0.4 to 2.4V 0.8 to 2.0V
Figure 4. AC Testing Load Circuit
1.3V
1N914
Note that Output Hi-Z is defined as the point where data is no longer driven.
3.3k
Figure 3. AC Testing Input Output Waveforms
DEVICE UNDER TEST 2.0V 0.8V
AI00826
OUT CL = 100pF
2.4V
0.4V
CL includes JIG capacitance
AI00828
Table 5. Capacitance (1) (TA = 25 C, f = 1 MHz )
Symbol C IN C OUT Parameter Input Capacitance Output Capacitance Test Condition VIN = 0V VOUT = 0V Min Max 6 12 Unit pF pF
Note: 1. Sampled only, not 100% tested.
Figure 5. Read Mode AC Waveforms
A0-A12 tAVQV E tGLQV G tELQV Q0-Q7
VALID tAXQX
tEHQZ
tGHQZ Hi-Z DATA OUT
AI00778
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M27C64A
Table 6. Read Mode DC Characteristics (1) (TA = 0 to 70 C or -40 to 85 C: VCC = 5V 10%; VPP = VCC)
Symbol ILI ILO ICC ICC1 ICC2 IPP VIL VIH
(2)
Parameter Input Leakage Current Output Leakage Current Supply Current Supply Current (Standby) TTL Supply Current (Standby) CMOS Program Current Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage TTL Output High Voltage CMOS
Test Condition 0V VIN VCC 0V VOUT VCC E = VIL, G = VIL, IOUT = 0mA, f = 5MHz E = VIH E > VCC - 0.2V VPP = VCC
Min
Max 10 10 30 1 100 100
Unit A A mA mA A A V V V V V
-0.3 2 IOL = 2.1mA IOH = -400A IOH = -100A 2.4 VCC - 0.7V
0.8 VCC + 1 0.4
VOL VOH
Notes: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously with or after VPP. 2. Maximum DC voltage on Output is VCC +0.5V.
Table 7. Read Mode AC Characteristics (1) (TA = 0 to 70 C or -40 to 85 C: VCC = 5V 10%; VPP = VCC)
M27C64A Symbol Alt Parameter Test Condition -15 -20 -25 -30 Unit
Min Max Min Max Min Max Min Max tAVQV tELQV tGLQV tEHQZ (2) tGHQZ
(2)
tACC tCE tOE tDF tDF tOH
Address Valid to Output Valid Chip Enable Low to Output Valid Output Enable Low to Output Valid Chip Enable High to Output Hi-Z Output Enable High to Output Hi-Z Address Transition to Output Transition
E = VIL, G = VIL G = VIL E = VIL G = VIL E = VIL E = VIL, G = VIL 0 0 0
150 150 75 50 50 0 0 0
200 200 80 50 50 0 0 0
250 250 100 60 60 0 0 0
300 300 120 105 105
ns ns ns ns ns ns
tAXQX
Notes: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously with or after VPP. 2. Sampled only, not 100% tested.
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M27C64A
Table 8. Programming Mode DC Characteristics (1) (TA = 25 C; VCC = 6V 0.25V; VPP = 12.5V 0.3V)
Symbol ILI ICC IPP VIL VIH VOL VOH VID Parameter Input Leakage Current Supply Current Program Current Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage TTL A9 Voltage IOL = 2.1mA IOH = -400A 2.4 11.5 12.5 E = VIL -0.3 2 Test Condition VIL VIN VIH Min Max 10 30 30 0.8 VCC + 0.5 0.4 Unit A mA mA V V V V V
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.
Table 9. Programming Mode AC Characteristics (1) (TA = 25 C; VCC = 6V 0.25V; VPP = 12.5V 0.3V)
Symbol tAVPL tQVPL tVPHPL tVCHPL tELPL Alt tAS tDS tVPS tVCS tCES Parameter Address Valid to Program Low Input Valid to Program Low VPP High to Program Low VCC High to Program Low Chip Enable Low to Program Low Program Pulse Width (Initial) tPLPH tPW Program Pulse Width (Over Program) Program High to Input Transition Input Transition to Output Enable Low Output Enable Low to Output Valid Output Enable High to Output Hi-Z Output Enable High to Address Transition 0 0 Test Condition Min 2 2 2 2 2 0.95 2.85 2 2 100 130 1.05 78.75 Max Unit s s s s s ms ms s s ns ns ns
tPHQX tQXGL tGLQV tGHQZ
(2)
tDH tOES tOE tDFP tAH
tGHAX
Notes: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP. 2. Sampled only, not 100% tested.
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M27C64A
Figure 6. Programming and Verify Modes AC Waveforms
A0-A12 tAVPL Q0-Q7 tQVPL VPP tVPHPL VCC tVCHPL E tELPL P tPLPH G tQXGL tGHAX tGLQV tGHQZ DATA IN tPHQX DATA OUT VALID
PROGRAM
VERIFY
AI00779
Figure 7. Programming Flowchart
VCC = 6V, VPP = 12.5V
n =1
P = 1ms Pulse NO ++n > 25 YES NO VERIFY YES P = 3ms Pulse by n FAIL Last Addr NO ++ Addr
YES CHECK ALL BYTES 1st: VCC = 6V 2nd: VCC = 4.2V
AI01167
Programming When delivered (and after each erasure for UV EPROM), all bits of the M27C64A are in the "1" state. Data is introduced by selectively programming "0s" into the desired bit locations. Although only "0s" will be programmed, both "1s" and "0s" can be present in the data word. The only way to change a "0" to a "1" is by die exposition to ultraviolet light (UV EPROM). The M27C64A is in the programming mode when Vpp input is at 12.5V, and E and P are at TTL-low. The data to be programmed is applied 8 bits in parallel to the data output pins. The levels required for the address and data inputs are TTL. VCC is specified to be 6V 0.25V. High Speed Programming The high speed programming algorithm, described in the flowchart, rapidly programs the M27C64A using an efficient and reliable method, particularly suited to the production programming environment. An individual device will take around1 minute to program. Program Inhibit Programming of multiple M27C64A in parallel with different data is also easily accomplished. Except for E, all like inputs including G of the parallel M27C64A may be common. A TTL low level pulse applied to a M27C64A E input, with P low and VPP
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M27C64A
DEVICE OPERATIONS (cont'd) at 12.5V, will program that M27C64A. A high level E input inhibits the other M27C64A from being programmed. Program Verify A verify (read) should be performed on the programmed bits to determine that they were correctly programmed. The verify is accomplished with E and G at VIL, P at VIH, VPP at 12.5V and VCC at 6V. Electronic Signature The Electronic Signature mode allows the reading out of a binary code from an EPROM that will identify its manufacturer and type. This mode is intended for use by programming equipment to automatically match the device to be programmed with its corresponding programming algorithm. This mode is functional in the 25C 5C ambient temperature range that is required when programming the M27C64A. To activate this mode, the programming equipmentmust force11.5V to 12.5V on address line A9 of the M27C64A, with VPP=VCC=5V. Two identifier bytes may then be sequenced from the device outputs by toggling address line A0 from VIL to VIH. All other address lines must be held at VIL during Electronic Signature mode. Byte 0 (A0=VIL ) represents the manufacturer code and byte 1 (A0=VIH) the device identifier code. For ORDERING INFORMATION SCHEME Example: M27C64A -15 F 1 TR the SGS-THOMSON M27C64A, these two identifier bytes are given in Table 4 and can be read-out on outputs Q0 to Q7. ERASURE OPERATION (applies to UV EPROM) The erasure characteristics of the M27C64A is such that erasure begins when the cells are exposed to light with wavelengths shorter than approximately 4000 A. It should be noted that sunlight and some type of fluorescent lamps have wavelengths in the 3000-4000 A range. Research shows that constant exposure to room level fluorescent lighting could erase a typical M27C64A in about 3 years, while it would take approximately 1 week to cause erasure when exposed to direct sunlight. If the M27C64A is to be exposed to these types of lighting conditions for extended periods of time, it is suggested that opaque labels be put over the M27C64Awindow to prevent unintentional erasure. The recommended erasure procedure for the M27C64A is exposure to short wave ultraviolet light which has a wavelength of 2537 A. The integrated dose (i.e. UV intensity x exposure time) for erasure should be a minimum of 15 W-sec/cm2. The erasure time with this dosage is approximately 15 to 20 minutes using an ultraviolet lamp with 12000 uW/cm2 powerrating. The M27C64A should be placed within 2.5 cm (1 inch) of the lamp tubes during the erasure. Some lamps have a filter on their tubeswhich should be removed beforeerasure.
Speed -15 -20 -25 -30 150 ns 200 ns 250 ns 300 ns F C
Package FDIP28W PLCC32
Temperature Range 1 6 0 to 70 C -40 to 85 C TR X
Option Additional Burn-in Tape & Reel Packing
For a list of available options (Speed, Package, etc...) refer to the current Memory Shortform catalogue. For further information on any aspect of this device, please contact SGS-THOMSON Sales Office nearest to you.
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M27C64A
FDIP28W - 28 pin Ceramic Frit-seal DIP, with window
Symb Typ A A1 A2 B B1 C D E E1 e1 e3 eA L S N
FDIP28W
mm Min Max 5.71 0.50 3.90 0.40 1.17 0.22 1.78 5.08 0.55 1.42 0.31 38.10 15.40 13.05 2.54 33.02 - - 16.17 3.18 1.52 7.11 - 4 28 15.80 13.36 - - 18.32 4.10 2.49 - 15 0.280 0.100 1.300 Typ
inches Min Max 0.225 0.020 0.154 0.016 0.046 0.009 0.070 0.200 0.022 0.056 0.012 1.500 0.606 0.514 - - 0.637 0.125 0.060 - 4 28 0.622 0.526 - - 0.721 0.161 0.098 - 15
A2 A1 B1 B e3 D S
N 1
A L eA C
e1
E1
E
FDIPW-a
Drawing is no to scale
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M27C64A
PLCC32 - 32 lead Plastic Leaded Chip Carrier - rectangular
Symb Typ A A1 B B1 D D1 D2 E E1 E2 e N Nd Ne CP
PLCC32
mm Min 2.54 1.52 0.33 0.66 12.32 11.35 9.91 14.86 13.89 12.45 1.27 - 32 7 9 0.10 Max 3.56 2.41 0.53 0.81 12.57 11.56 10.92 15.11 14.10 13.46 - 0.050 Typ
inches Min 0.100 0.060 0.013 0.026 0.485 0.447 0.390 0.585 0.547 0.490 - 32 7 9 0.004 Max 0.140 0.095 0.021 0.032 0.495 0.455 0.430 0.595 0.555 0.530 -
D D1
1N
A1
B1
Ne
E1 E
D2/E2 B
e
Nd
A CP
PLCC
Drawing is no to scale
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M27C64A
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c) 1995 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
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